ST’s MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.

The main features of our wide portfolio include:

  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.

PowerFLAT 8x8 HV with Kelvin source connection

ST has extended its offering of high-voltage MDmesh M2 MOSFETs with a new version of the 1-mm-high surface-mount PowerFLAT 8x8 HV package which has a dedicated kelvin source pin for improved gate drive signal. The compact form factor and high thermal performance of the package, combined with the low on-resistance, gate charge and input/output capacitances of the MDmesh M2 MOSFETs enable designers to increase the efficiency and save space in both soft-switching and hard-switching applications.