ST’s MOSFET portfolio offers a broad range of breakdown voltages from -100 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.
The main features of our wide portfolio include:
-100 V to 1700 V breakdown voltage range
More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
Intrinsic fast body diode option for selected product lines
Wide portfolio of automotive-grade MOSFETs
In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.