ST’s MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.

The main features of our wide portfolio include:

  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.

Main MOSFET series

Automotive MOSFETs in tiny 5x6 mm dual-side cooling package

ST has extended its offering of AEC-Q101 MOSFETs with the introduction of two 40 V devices in the advanced PowerFLAT™ 5x6 dual-side cooling (DSC) package with wettable flanks. The STLD200N4F6AG and STLD125N4F6AG, with a maximum on-resistance of 1.5 mΩ and 3.0 mΩ respectively, ensure high efficiency and help simplify system thermal management. The 0.8 mm-high PowerFLAT 5x6 DSC retains the footprint and thermally efficient bottom-side design of the standard wettable flank package, while it exposes the top-side source electrode to further enhance heat dissipation. This allows a higher current rating that increases power density, enabling designers to build smaller ECUs without trading off functionality, performance, or reliability.

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