This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
|DS9626: N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package||2.0||1 MB|
|AN4407: Advantage of the use of an added driver source lead in discrete Power MOSFETs||2.0||5 MB|
|AN4250: Fishbone diagram for power factor correction||1.1||772 KB|
|AN4829: Fishbone diagrams for a forward converter||1.1||1 MB|
|AN2842: Paralleling of power MOSFETs in PFC topology||1.4||896 KB|
|AN2344: Power MOSFET avalanche characteristics and ratings||1.3||880 KB|
|AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters||1.1||347 KB|
|TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products||1.0||657 KB|
|UM1575: Spice model tutorial for Power MOSFETs||1.3||1 MB|
|STW57N65M5-4 PSpice model||2.0||10 KB|
|Brochure Power management guide||09.2017||3 MB|
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STW57N65M5-4||TO247-4||Tube||Active : Product is in volume production||-||-||NEC||EAR99||CHINA||MORE INFO||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.