N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness

Design

Publications and Collaterals

Brochures
Description Version Size
Brochure Power management guide 05.2016 4 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
STP260N6F6 PSpice model 1.0 1 KB

Technical Documentation

Product Specifications
Description Version Size
DS6824 DS6824: N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages 5.1 750 KB
User Manuals
Description Version Size
UM1575 UM1575: Spice model tutorial for Power MOSFETs 1.3 1 MB

Tools and Software

Development Tools
Software Development Tools
Support & Community


Sample & Buy

Part Number Package Packing Type Marketing Status Unit Price (US$) * Quantity ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STP260N6F6 TO-220AB Tube Active - - NEC EAR99 CHINA MORE INFO DISTRIBUTOR AVAILABILITY
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STP260N6F6 ActiveTO-220ABIndustrialEcopack2 0 0
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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