ST’s STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.  Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications.

Features and benefits:

  • Among lowest RDS(on) in the market
  • Minimal RDS(on) x Qg for increased system efficiency and more compact designs
  • Lowest  Crss/Ciss ratio  for EMI immunity
  • High avalanche ruggedness

Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.

AEC-Q101-qualified 40 V STripFET F7 MOSFETs in PowerFLAT 5x6

ST has extended its portfolio of 40 V automotive-grade MOFSETs with the addition of two new 120 A STripFET F7 devices in the 0.88 mm profile PowerFLAT 5x6 package with wettable flanks. The 2.1 mΩ (typ) STL140N4F7AG and 1.68 mΩ (typ) STL190N4F7AG combine superior switching performance and energy efficiency with very low emitted noise and high immunity to false turn-on. Typical applications include high-current power train, body, or chassis and safety systems, as well as motor drives such as in electric power steering (EPS).

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