ST’s STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.  Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications.

Features and benefits:

  • Among lowest RDS(on) in the market
  • Minimal RDS(on) x Qg for increased system efficiency and more compact designs
  • Lowest  Crss/Ciss ratio  for EMI immunity
  • High avalanche ruggedness

Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.

AEC-Q101-qualified 40 V STripFET F7 MOSFETs

Available in the H2PAK 2- and 6-lead package respectively, ST’s STH410N4F7-2AG and STH410N4F7-6AG 40 V AEC-Q101-qualified MOSFETs are optimized for motor control 3-phase inverter applications such as electronic power steering (EPS). They combine an extremely low R DS(on) with a reduced Miller capacitance (thanks to a sophisticated double-electrode gate structure), a low C rss / C iss ratio and a very efficient intrinsic body diode for excellent EMI performance.

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