Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

Design

Technical Documentation

Product Specifications
Description Version Size
DS9011 DS9011: Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package 10.0 794 KB
Application Notes
Description Version Size
AN4671 AN4671: How to fine tune your SiC MOSFET gate driver to minimize losses 1.0 560 KB
Technical Notes & Articles
Description Version Size
TA0349 TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.0 2 MB
User Manuals
Description Version Size
UM1575 UM1575: Spice model tutorial for Power MOSFETs 1.2 1 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
SCT30N120 PSpice model 2.0 6 KB

Publications and Collaterals

Flyers
Description Version Size
SiC MOSFETs: The real breakthrough in high-voltage switching 2.0 1 MB
Brochures
Description Version Size
Brochure Power management guide 05.2016 4 MB
Conference Papers
Description Version Size
Cost benefits of a SiC MOSFET-based high frequency converter 1.0 1 MB
Wide bandgap materials: revolution in automotive power electronics 1.0 792 KB




Sample & Buy

Part Number Package Packing Type Marketing Status Unit Price (US$) * Quantity ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
SCT30N120 HiP247 IN LINE Tube Active 25 1000 NEC EAR99 CHINA MORE INFO Get Sample Add to cart DISTRIBUTOR AVAILABILITY
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT30N120 ActiveHiP247 IN LINEIndustrialEcopack2 0 0
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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