1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®.

Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC® package

Design

Technical Documentation

Product Specifications
Description Version Size
DS6726 DS6726: RF power transistors HF/VHF/UHF N-channel MOSFETs 3.1 325 KB
Application Notes
Description Version Size
AN3232 AN3232: Mounting recommendations for STAC® and STAP® boltdown packages 4.0 1 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
STAC4932x ADS model 1.0 417 KB

Tools and Software

Development Tools
Software Development Tools




Sample & Buy

Part Number Marketing Status Quantity Unit Price (US$) * Package Packing Type ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STAC4932F Active 1000 67.9 STAC244F Loose Piece NEC EAR99 MOROCCO MORE INFO
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STAC4932F ActiveSTAC244FIndustrialEcopack1
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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