The STEVAL-IMR002V1 demonstration board is based on the new generation of high voltage DMOS products housed in the STAC® air cavity package and capable of delivering an output power up to 1.2 kW for industrial, scientific, and medical applications such as 1.5 T and 3 T magnetic resonance imaging (MRI).
This new air-cavity technology now enables lower thermal resistance, lower weight, and reduced cost compared to devices in ceramic packages.
The STEVAL-IMR002V1 demonstration board implements the design of a 2 kW-100 V, 123 MHz Class AB peak power amplifier (PPA) for 3 Tesla MRI applications.
It uses double push-pull bolt-down devices, two STAC4932B - N-channel MOSFETs, capable of exceeding 2000 W @ 123 MHz with large signal gain of 19 dB in Class AB and a drain efficiency of 60%.
It almost doubles the output power of previous amplifiers using MOSFET transistors in standard ceramic packages.
|DB1502: 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B||1.1||286 KB|
|STEVAL-IMR002V1 gerber files||1.0||56 KB|
|STEVAL-IMR002V1 BOM||1.0||56 KB|
|STEVAL-IMR002V1 schematics||1.0||151 KB|
|Evaluation products license agreement||1.4||128 KB|
|製品型番||Core Product||Marketing Status||Unit Price (US$) *||数量||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STEVAL-IMR002V1||STAC4932B||NRND : Not Recommended for New Design. Product is in volume production only to support customers ongoing production.||-||1||NEC||EAR99||-||MORE INFO||No availability reported, please contact our Sales office|
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.