The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.
The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.
The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage.
The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The device is available in a compact VFQFPN package.
|製品型番||パッケージ||Packing Type||Marketing Status||Unit Price (US$) *||数量||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|PWD13F60TR||QFN 10X13||Tape And Reel||Active : Product is in volume production||2.65||1000||NEC||EAR99||-||MORE INFO||DISTRIBUTOR AVAILABILITY|
|PWD13F60||QFN 10X13||Tray||Active : Product is in volume production||2.65||1000||NEC||EAR99||-||MORE INFO||DISTRIBUTOR AVAILABILITY|
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.