smartDRIVETM IGTBおよびMOSFETドライバには、保護用コンパレータ、電流検知用オペアンプ、およびブートストラップ・ダイオードが集積されているため、システム・レベルで必要な外部部品の点数を削減することが可能です。

Powerful, rugged, and efficient: Get more power in smaller packages with STDRIVE

ST's new STDRIVE family of half-bridge MOSFET and IGBT gate drivers are designed to operate in harsh industrial environments withstanding high voltages up to 600 V, while maintaining good noise immunity and low switching losses.

L6491, L6494, and L6498 hagh-voltage half-bridge gate driversare particularly suited for medium- and high-capacity power switches thanks to their sink/source current capability up to 4 A.

An integrated bootstrap diode and comparator for fast protection against over-current and over-temperature conditions, as well as an independent UVLO protection circuit, make the application's PCB design simpler and more compact in addition to helping to reduce the overall bill of material.