1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®.

Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC® package

デザイン

技術文書

製品スペック
Description バージョン サイズ
DS6726 DS6726: RF power transistors HF/VHF/UHF N-channel MOSFETs 3.1 325 KB
アプリケーションノート
Description バージョン サイズ
AN3232 AN3232: Mounting recommendations for STAC® and STAP® boltdown packages 4.0 1 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description バージョン サイズ
STAC4932x ADS model 1.0 417 KB

ツール & ソフトウェア

開発ツール・ハードウェア
Software Development Tools
サポート & コミュニティ



サンプル & 購入

製品型番 Marketing Status 数量 Unit Price (US$) * パッケージ Packing Type ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STAC4932F Active 1000 67.9 STAC244F Loose Piece NEC EAR99 MOROCCO MORE INFO
test

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

品質 & 信頼性

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STAC4932F アクティブSTAC244FIndustrialEcopack1
test

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

×