Rad-Hard N-Channel 60V - 35A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad TID
  • SEE radiation hardened

设计

技术文档

产品规格
Description Version Size
DS7070 DS7070: Rad-Hard N-channel 60 V, 30 A Power MOSFET 10.0 641 KB
Technical Notes & Articles
Description Version Size
TN1188 TN1188: Chip storage and handling for aerospace products with silver backside 2.0 331 KB
TN1181 TN1181: Engineering Model quality level 1.1 142 KB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
STRH40N6 beginning of life PSpice model (.lib) 2.1 1 KB

出版刊物和宣传资料

选型指南
Description Version Size
Aerospace and Hi-rel - ESCC, JANS & QML products 1.0 2 MB
支持和社区

样片和购买

型号 Marketing Status SMD PIN/Detailed Spec Quality Level EPPL Hi-Rel Package Lead Finish Packing Type Package: Product Marking Mass (gr) ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STRH40N6S1 Active - Engineering Model - SMD.5 Gold Carrier Tape STRH40N6S1 2 NEC EAR99 FRANCE MORE INFO
STRH40N6SG Active 5205/024/01 ESCC Flight - SMD.5 Gold Carrier Tape tbd 2 NEC EAR99 FRANCE MORE INFO
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

质量和可靠性

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STRH40N6S1 ActiveSMD.5IndustrialN/A
STRH40N6SG ActiveSMD.5IndustrialN/A
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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