Leading-edge power technologies for both high-voltage and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors. Our portfolio includes MOSFETs ranging from -500 to 1700 V, silicon carbide (SiC) MOSFETs featuring the industry’s highest temperature rating of 200 °C, IGBTs with breakdown voltages ranging from 300 to 1250 V and a wide range of power bipolar transistors.

Wide bandgap transistors

Wide bandgap transistors


650 and 1200 V SiC MOSFETs featuring the industry’s highest temperature rating of 200 °C and a very small variation of the RDS(on) even at high temperatures.

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Power MOSFETs

Power MOSFETs


Broad range of breakdown voltages from -500 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.

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IGBTs

IGBTs


Breakdown voltages from 300 to 1250 V. Low VCE(SAT) for reduced conduction losses. Improved switch-off energy spread versus increasing temperature.

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Power Bipolar

Power bipolar


The range includes Darlington transistors and BJTs with a VCES from 15 to 1700 V.



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