A very low gate charge (Qg) combined with an excellent output capacitance (Coss) profile make ST’s MDmesh M2 series ideal for use in resonant-type supplies (LLC converters). With a breakdown voltage ranging from 400 V to  650 V, the MDmesh M2 MOSFETs are available in a wide range of package options, including the new 4-lead TO247-4 which features a dedicated control pin for increased switching efficiency, the 1-mm-high surface-mount PowerFLAT 8x8 HV and PowerFLAT 5x6 HV featuring an exposed metal drain pad for efficient heat dissipation.

Key features and benefits:

  • Extremely low Qg for increased efficiency
  • Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)

600 V MDmesh M2 EP MOSFETs

The MDmesh M2 EP MOSFETs are ST’s latest addition to the MDmesh M2 series of high-voltage MOSFETs ideal for both hard- and soft-switching topologies. Tailored for the most demanding very high frequency converters (> 150 kHz), these new 600 V MOSFETs combine a very low on-state resistance and gate charge with a reduction of Eoff of up to 20% compared with the previous M2 MOSFETs. They offer very low switching losses, especially under light load conditions, and enable designers to more easily meet the increasingly stringent energy-efficiency targets and design more compact and lighter solutions.