N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness

资源

技术文档

产品规格
Description Version Size
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package 4.1 725 KB
应用手册
Description Version Size
Impact of power MOSFET VGS on buck converter performance 1.2 1 MB
Power MOSFET: Rg impact on applications 1.1 1 MB
ST’s MOSFET technologies for uninterruptible power supplies 1.1 1 MB
The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1 347 KB
用户手册
Description Version Size
Spice model tutorial for Power MOSFETs 1.3 1 MB

HW Model, CAD Libraries & SVD

HW Model, CAD Libraries & SVD
Description Version Size
STH260N6F6-2 PSpice model 1.0 9 KB

出版刊物和宣传资料

手册
Description Version Size
Brochure Power management guide 09.2017 4 MB

工具和软件

开发工具硬件
Software Development Tools
支持和社区


样片和购买

型号 Package Packing Type Marketing Status Unit Price (US$) * Quantity ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STH260N6F6-2 H2PAK-2 Tape And Reel Active - - NEC EAR99 CHINA MORE INFO 获取样片 Add to cart DISTRIBUTOR AVAILABILITY
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

质量和可靠性

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH260N6F6-2 ActiveH2PAK-2IndustrialEcopack1
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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