N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness



Description Version Size
DS7207 DS7207: N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package 4.1 725 KB
Description Version Size
AN3267 AN3267: Impact of power MOSFET VGS on buck converter performance 1.2 1 MB
AN4191 AN4191: Power MOSFET: Rg impact on applications 1.1 1 MB
AN4390 AN4390: ST’s MOSFET technologies for uninterruptible power supplies 1.1 1 MB
AN4337 AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1 346 KB
Description Version Size
UM1575 UM1575: Spice model tutorial for Power MOSFETs 1.3 1 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
STH260N6F6-2 PSpice model 1.0 9 KB


Description Version Size
Brochure Power management guide 05.2016 7 MB


Software Development Tools


型号 Package Packing Type Marketing Status Unit Price (US$) * Quantity ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STH260N6F6-2 H2PAK-2 Tape And Reel Active - - NEC EAR99 CHINA MORE INFO 获取样片 Add to cart DISTRIBUTOR AVAILABILITY

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors


型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH260N6F6-2 ActiveH2PAK-2IndustrialEcopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.