This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses