P-沟道 (-20V 至 -500V)  

ST’s portfolio of P-channel MOSFETs has been recently enlarged with the addition of trench-gate devices. These new P-channel STripFET MOSFETs feature extremely low on-resistance. Available in very small form factor packages, they are specifically designed for portable applications. MOSFET features for this voltage rating include:

  • Very low RDS(on) for increased application efficiency
  • Standard, logic and ultra level threshold for increased design flexibility
These MOSFETs are optimized to meet a broad range of requirements for load switch, linear regulator and automotive applications. They are available in a wide range of compact packages such as the D2PAK, DPAK, TO-220, SO-8, SOT-223, SOT23-6L and PowerFLAT 2x2.

Automotive-grade p-channel MOSFETs

ST has extended its offering of automotive-grade MOSFETs with the introduction of two p-channel trench-based MOSFETs. Based on ST’s STripFET H6 and F6 technology respectively, the STD37P3H6AG (-30 V, standard level driven) and STD45P4LLF6AG (-40 V, logic level driven) are housed in a DPAK package. They help simplify circuitry while optimizing performance and component count in automotive applications such as high-side switches, reverse polarity protection and audio amplifiers.

工具与软件 资源
精选 产品

New P-channel -20 V STripFET H7 MOSFETs
RDS(on) as low as 22.5 mΩ, 0.4 V threshold voltage

精选 视频

查看全部
800 V MDmesh K5 MOSFETs
60 V STripFET F7 MOSFETs
1200 V SiC MOSFETs

保留所有权利©2016年意法半导体
使用条款 | Sales Terms & Conditions | 保密协议 | 联系方式

京ICP备14016349号-2

×