意法半导体的碳化硅(SiC)MOSFET是基于新型碳化硅材料的创新型MOSFET,具有极低的单位面积导通内阻RDS(on) *(在1200 V的额定电压下)和出色的开关性能,从而实现了系统的高效率和高功率密度。与硅MOSFET相比,即使在高温下,SiC MOSFET尤其具有高温下极低导通电阻的优势。与同类中最佳的1200 V IGBT相比,SiC MOSFET具有在所有温度范围内超快速开关性能的优势,从而简化了电力电子系统的散热设计。

SiC MOSFET的主要特性和优势包括:

  • 极高的工作结温(Tj max = 200 °C),缩小了PCB尺寸(简化了热设计),提高了系统可靠性
  • 大幅降低了开关损耗(随温度变化影响最小),从而实现了更紧凑的设计(采用更小巧的无源元件)
  • 低导通电阻(典型值,80 mΩ @ 25 °C),提高了系统效率(降低了散热要求)
  • 易于驱动(经济型网络驱动)
  • 稳定的超快速本体二极管(无需外部续流二极管,从而进一步缩小了系统尺寸)

New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET

ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V SCTW100N65G2AG which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will complete the qualification to AEC-Q101 in early 2017.

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