New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET
ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V
which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will complete the qualification to AEC-Q101 in early 2017.