The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.
|DS6724: HF/VHF/UHF RF power N-channel MOSFET||7.0||503 KB|
|AN4016: 2 kW PPA for ISM applications||1.0||981 KB|
|AN3232: Mounting recommendations for STAC® and STAP® boltdown packages||4.0||1 MB|
|STAC4932x ADS model||1.0||417 KB|
|STEVAL-IMR002V1||2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B|
|型号||Marketing Status||Quantity||Unit Price (US$) *||Package||Packing Type||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STAC4932B||Active : Product is in volume production||1000||67.9||STAC244B||Loose Piece||NEC||EAR99||MOROCCO||MORE INFO||DISTRIBUTOR AVAILABILITY|
|型号||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.