1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.

Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air-cavity STAC® packaging technology

设计

技术文档

产品规格
Description Version Size
DS6724 DS6724: HF/VHF/UHF RF power N-channel MOSFET 7.0 503 KB
应用手册
Description Version Size
AN4016 AN4016: 2 kW PPA for ISM applications 1.0 981 KB
AN3232 AN3232: Mounting recommendations for STAC® and STAP® boltdown packages 4.0 1 MB

HW Model & CAD Libraries

HW Model & CAD Libraries
Description Version Size
STAC4932x ADS model 1.0 417 KB

工具和软件

开发工具硬件
评估工具
Software Development Tools
解决方案评估工具




样片和购买

型号 Marketing Status Quantity Unit Price (US$) * Package Packing Type ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STAC4932B Active 1000 67.9 STAC244B Loose Piece NEC EAR99 MOROCCO MORE INFO DISTRIBUTOR AVAILABILITY
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

质量和可靠性

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STAC4932B ActiveSTAC244BIndustrialEcopack1 0 0
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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