1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®.

Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC® package



Description Version Size
DS6726 DS6726: RF power transistors HF/VHF/UHF N-channel MOSFETs 3.1 325 KB
Description Version Size
AN3232 AN3232: Mounting recommendations for STAC® and STAP® boltdown packages 4.0 1 MB

HW Model, CAD Libraries & SVD

HW Model, CAD Libraries & SVD
Description Version Size
STAC4932x ADS model 1.0 417 KB


Software Development Tools


型号 Marketing Status Quantity Unit Price (US$) * Package Packing Type ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STAC4932F Active 1000 67.9 STAC244F Loose Piece NEC EAR99 MOROCCO MORE INFO No availability reported, please contact our Sales office

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors


型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STAC4932F ActiveSTAC244FIndustrialEcopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.