意法半导体的50 V RF DMOS晶体管采用了最佳工艺布局,提升了HF和VHF频带下的RF性能,是ISM、HF收发器和FM广播应用的理想之选。它们具有出色的RF增益(>20 dB)与功率饱和度(高达450 W),以及高击穿电压(高达200 V以上)和更高的耐用性。

主要特性:

  • 输出功率:高达350 W
  • 击穿电压BVDSS:高达200 V以上
  • 极高的强度:无穷大:1 VSWR(全相)
  • 同类中最高的可靠性:1百万次电力循环
  • 低热阻
  • 与陶瓷封装相比,意法半导体的STAC封装使结-壳之间热阻降低了25%,同时提升了RF性能。

Moisture-resistant 50 V RF DMOS transistors

Thanks to the gel-filled package cavity, the 150 W SD2931-12MR and 300 W SD4933MR provide a cost-effective solution for industrial equipment operating in high-moisture environments. The gel protects the die from electro-migration such as silver dendrite migration, a well-known phenomenon in standard ceramic packages that occurs due to a combination of high temperature, biasing and humidity. The SD4933MR also features the industry’s highest breakdown voltage (> 200 V) combined with a 65:1 load mismatch capability in all phases for the most robust design needs.

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