28 / 32V RF LDMOS器件，HF至1GHz - STMicroelectronics

意法半导体’的28/32 V LDMOS晶体管面向工作频率高达1 GHz的应用，是中继器、基站和政府宽带通信等应用的理想之选。它们提供陶瓷封装和低成本PowerSO-10RF塑料封装选项。

主要特性：

频率：HF ~ 1 GHz
击穿电压BVDSS：>65 V
电源电压：高达32 V
输出功率：2 ~ 120 W
增益：>14 dB
效率：>50%
以晶片形式提供

PD57018-E
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
SD57030-01
30W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
PD57060S-E
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
SD57120
120W 28V 700 to 1000MHz LDMOS TRANSISTOR in push-pull package
SD57060-01
60W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
SD57060
60W 28V HF to 1GHz LDMOS TRANSISTOR
PD57002-E
2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
SD57045-01
45W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
SD57045
45W 28V HF to 1GHz LDMOS TRANSISTOR
SD56120
120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package
PD57070S-E
70W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57006-E
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57030-E
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57045-E
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
SD57030
30W 28V HF to 1GHz LDMOS TRANSISTOR

All rights reserved © 2018 STMicroelectronics
使用条款 | Sales Terms & Conditions | 保密协议 | 联系方式

京ICP备14016349号-2