The use of high-voltage silicon-carbide diodes in power converter circuits enables to jump over traditional efficiency and power density hurdles.

ST has designed 2 trade-off versions of 650V and 1200V diodes - with the best-in-class forward voltage drop (VF) and surge capability (IFSM) - to drastically limit the conduction losses and lower the diode junction temperature, which is key for secondary rectification functions.
In PFC applications – for primary rectification – the diodes are directly connected to the main supply. The proven robustness our silicon carbide diodes has enabled ST to be the first supplier to release automotive-grade and AEC-Q101-qualified silicon carbide devices on the market. And our engineers work on low VF and high surge capability now contributes to ever-increasing design robustness, for augmented converter efficiency and reliability.

ST’s automotive-grade 650 V diode series ranges from 6 to 40 A, in TO-220, TO-220ACIns, DO-247, TO-247, I²PAK and DPAK packages. Our very low VF and high IFSM series automotive-grade 1200 V devices range from 10 to 20 A, in a TO-220 package.

1200 V SiC automotive-grade diodes with the lowest forward voltage drop ever

The new AEC-Q101 1200 V SiC diodes – 10-, 15- and 20-amp rated – are ideal for use in high-power applications such as charging stations, OBC, power supplies, and motor drives. Their surge capability for a 10 ms pulse is in the range of 7 times the diodes’ nominal current, and confers these 1200 V silicon-carbide diodes the state-of-the-art robustness. With a typical forward voltage drop (V F) of 1.35 V at nominal current and room temperature, they set the highest level/standard on the market. Available in D²PAK and TO-220AC packages, the STPSC10H12-Y, STPSC15H12-Y and STPSC20H12-Y fulfill the automotive robustness and performance requirements.

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