In the challenging quest of increasing electrical efficiency and longer battery autonomy for hybrid and electric vehicles (HEVs, EVs), high-voltage silicon-carbide diodes are key to power-supply designers.

Ideal for power factor correction circuits (PFCs), on-board battery chargers (OBCs) and motor drives, ST’s automotive-grade SiC diodes prove high-surge capability (IFSM), guaranteeing robustness. While ST's already available 650 V power Schottky SiC automotive-grade diodes exhibit negligible switching losses, our new series of low-VF SiCs exceeds expectations with at least a 150 mV VF improvement over the fastest 600 V ultrafast silicon diodes. Available in TO-220AC, DO-247 and TO-247 packages, all these are AEC-Q101 qualified, and PPAP capable (upon request).

A 1200 V automotive-grade SiC diode portfolio – rated from 6 to 20 A – is expected to be available at the end of this year, in various package versions as well.

Performance comparison curve between 600 V Si, Ultrafast tandem and Si diodes

1200 V SiC automotive-grade diodes with the lowest forward voltage drop ever

The  new AEC-Q101 1200 V SiC diodes – 10-, 15- and 20-amp rated – are ideal for use in high-power applications such as charging stations, OBC, power supplies, and motor drives. Their surge capability for a 10 ms pulse is in the range of 7 times the diodes’ nominal current, and confers these 1200 V silicon-carbide diodes the state-of-the-art robustness. With a typical forward voltage drop (V F) of 1.35 V at nominal current and room temperature, they set the highest level/standard on the market. Available in D²PAK and TO-220AC packages, the  STPSC10H12-YSTPSC15H12-Y and  STPSC20H12-Y fulfill the automotive robustness and performance requirements.

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