Designed for applications working between 2 and 20 kHz in hard-switching circuit topologies, the 650 V IGBT M series delivers the best trade-off between conduction and switch-off losses.

A minimum short-circuit withstand time of 6 µs at 150 °C starting junction temperature combined with a maximum operating junction temperature of 175 °C and a wide safe operating area (SOA) extend service lifetime and boost reliability in applications where high power dissipation is required.

With a current rating ranging from 4 to 120 A, the devices are available in a wide selection of packages that include a new generation of free-wheeling diodes optimized for fast recovery while maintaining a low forward drop and a high level of softness.

Main characteristics:

  • Low-loss IGBTs for applications up to 20 kHz
  • High robustness and reliability thanks to 650 V breakdown voltage, 6 µs minimum short-circuit rating (at 150 °C starting TJ) and extended maximum operating TJ of 175 °C
  • Thin IGBT die for increased thermal resistance
  • Positive VCE(sat) temperature coefficient, with tight parameter distribution, for design simplification and easy paralleling
  • Optimized diode for fast recovery (high level of softness, low EMI and turn-on losses)

IGBT M series

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