ST’s MDmesh MOSFETs with a breakdown voltage greater than 700 V offer a very low gate charge (Qg) and low on-resistance (R DS(on)) down to 250 mΩ (at 900 V) in the TO-220 and 900 mΩ (at 1500 V) in the TO-247.
Specific voltages available include 800 V, 850 V, 900 V, 950 V, 1050 V, 1200 V and 1500 V.
ST has also enriched its portfolio of very high voltage MOSFETs with the introduction of 950 V and 1050 V fast recovery diode devices (MDmesh DK5) ideal for ZVS LLC resonant converters. They feature the industry’s best reverse recovery time (t rr) of 250 ns (typ.).
These MOSFETs help simplify designs and increase efficiency in applications such as SMPS, monitors and TV adapters, auxiliary power supplies, battery chargers, medical, UPS, metering, micro-inverters, LED drivers and HF ballasts.

1200 V MDmesh K5 power MOSFETs

ST’s MDmesh K5 series of super-junction MOSFETs has been extended with the introduction of 1200 V devices ensuring a higher safety margin for more robust and reliable applications. Ideal for welding, 3-phase SMPS, solar-micro inverters and lighting applications, they feature the industry’s best figure of merit (FoM) thanks to the low on-resistance (down to 0.69 Ω in the TO-220 package) combined with ultra-low gate charge (44.2 nC).