ST’s MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.

The main features of our wide portfolio include:

  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.

Arcing-resistant package extends MOSFETs portfolio

ST has extended its offering of MDmesh M2 and MDmesh K5 MOSFETs with a new package option, the fully isolated TO-220FP wide creepage. It features an improved creepage (4.25 mm pin distance) for a higher level of protection against high voltage arcing failures. It eliminates the special potting, lead forming, sleeving, or sealing needed to prevent the arcing when using conventional packages with 2.54 mm lead spacing, resulting in simplified manufacturing and reduced system cost.
High voltage arcing can occur due to dust entering the case, which reduces the effect of the creepage. Thanks to the wider creepage, this package option meets the demanding needs of open frame power supplies such as those found in TVs and PCs.