This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
|DS8902: Automotive-grade N-channel 1000 V, 5.6 Ω typ., 2.2 A SuperMESH™ Power MOSFET Zener-protected in a DPAK||2.0||759 KB|
|AN4250: Fishbone diagram for power factor correction||1.1||772 KB|
|AN1703: Guidelines for using ST's MOSFET smd Packages||1.3||776 KB|
|AN2842: Paralleling of power MOSFETs in PFC topology||1.4||896 KB|
|AN2344: Power MOSFET avalanche characteristics and ratings||1.3||880 KB|
|AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters||1.1||347 KB|
|TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products||1.0||657 KB|
|UM1575: Spice model tutorial for Power MOSFETs||1.3||1 MB|
|Brochure Power management guide||09.2017||3 MB|
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STD4NK100Z||DPAK||Tape And Reel||Active : Product is in volume production||1.35||1000||NEC||EAR99||CHINA||MORE INFO||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.