This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss /Ciss ratio for EMI immunity
- High avalanche ruggedness