Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
  • 6 µs minimum short-circuit withstanding time at TJ = 150 °C


Technical Documentation

Product Specifications
Description Version Size
DS11201 DS11201: Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing 3.0 430 KB
Support & Community

Sample & Buy

Part Number Packing Type Marketing Status ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STG200M65F2D8AG Tray Active NEC EAR99 FRANCE MORE INFO No availability reported, please contact our Sales office

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Grade Material Declaration**
STG200M65F2D8AG ActiveAutomotive 0 0

(**) The Material Declaration forms available on may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.