650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of short-circuit withstand time
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 50 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C

Resources

Technical Documentation

Product Specifications
Description Version Size
DS12311 DS12311: 650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing 1.0 428 KB
Support & Community


Sample & Buy

Part Number Packing Type Marketing Status ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STG50M65F2D7 Not Applicable Active NEC EAR99 CHINA MORE INFO No availability reported, please contact our Sales office
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Grade Material Declaration**
STG50M65F2D7 ActiveIndustrial 0 0
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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