This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
|Part Number||Packing Type||Marketing Status||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STG50M65F2D7||Not Applicable||Active : Product is in volume production||NEC||EAR99||CHINA||MORE INFO||No availability reported, please contact our Sales office|
|Part Number||Marketing Status||Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.