This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
|DS11847: Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package||2.0||337 KB|
|AN4694: EMC design guides for motor control applications||1.0||2 MB|
|AN4929: H series 1200 V IGBTs on 3-phase full-bridge DC-DC power converter welding machine||1.1||1 MB|
|AN4544: IGBT datasheet tutorial||1.1||2 MB|
|ST IGBT Finder The new app for Android™ and iOS™||1.0||349 KB|
|Trench gate field-stop IGBT 1200V M series||1.0||968 KB|
|Brochure Power management guide||09.2017||3 MB|
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STGP8M120DF3||TO-220AB||Tube||Active : Product is in volume production||-||-||NEC||EAR99||CHINA||MORE INFO||No availability reported, please contact our Sales office|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.