The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
|DS12411: N-channel 600 V, 32 mΩ typ., 72 A MDmesh™ M6 Power MOSFET in TO247-4 package||1.0||710 KB|
|AN4250: Fishbone diagram for power factor correction||1.1||772 KB|
|AN2842: Paralleling of power MOSFETs in PFC topology||1.4||896 KB|
|AN2344: Power MOSFET avalanche characteristics and ratings||1.3||880 KB|
|AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters||1.1||347 KB|
|TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products||1.0||657 KB|
|UM1575: Spice model tutorial for Power MOSFETs||1.3||1 MB|
|Brochure Power management guide||09.2017||3 MB|
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STW75N60M6-4||TO247-4||Tube||Active : Product is in volume production||-||-||NEC||EAR99||CHINA||MORE INFO||No availability reported, please contact our Sales office|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.