The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
|DS2985: N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET in D²PAK, TO-220, TO-220FP and TO-247 packages||6.0||653 KB|
|AN4250: Fishbone diagram for power factor correction||1.1||772 KB|
|AN2842: Paralleling of power MOSFETs in PFC topology||1.4||896 KB|
|AN2344: Power MOSFET avalanche characteristics and ratings||1.3||880 KB|
|AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters||1.1||347 KB|
|TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products||1.0||657 KB|
|UM1575: Spice model tutorial for Power MOSFETs||1.3||1 MB|
|Brochure Power management guide||09.2017||3 MB|
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STW7NK90Z||TO-247||Tube||Active : Product is in volume production||-||-||NEC||EAR99||CHINA||MORE INFO||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.