Based on an optimized process layout resulting in improved RF performance over the HF and VHF frequency bands, ST’s 50 V RF DMOS transistors are ideal for ISM, HF transceivers and FM broadcast applications. They exhibit outstanding RF gain (>20 dB) and power saturation (up to 450 W) combined with high breakdown voltage (up to more than 200 V) and improved ruggedness.
Output power: up to 350 W
High breakdown voltage BVDSS: up to more than 200 V
Extremely high ruggedness: infinite:1 VSWR all phases
Best in-class reliability: 1 million power cycles
Low thermal resistance
ST air cavity (STAC®) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance compared to ceramic packages