ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market.
ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
Main characteristics: - High efficiency of the power converter (thanks to low forward conduction and switching losses) - High power integration with dual diodes for reduced PCB form factor - Significant reduction of power converter size and cost - Low EMC impact, for simplified certification and reduced time-to-market - Natural high robustness ensuring very high reliability