Transistors, Emitter Switched Bipolar

By incorporating a BJT (bipolar junction transistor) and a MOSFET connected in cascode in a single package, ST’s family of emitter switched bipolar transistors (ESBT®) offers low on-voltage (less than 1 V), high-voltage capabilities (up to 2200 V) and high switching frequency (up to 150 kHz).



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Cost-effective solution for 690 VAC SMPS applications
2200 V, 3 to 7 A, up to 150 kHz switching frequency

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