Based on proprietary leading-edge low- and high-voltage technologies, ST offers a broad portfolio of power MOSFETs with breakdown voltages ranging from -60 V to 1500 V. They enable an overall efficiency boost across a wide range of applications and operating conditions due to the low on-resistance, low gate charge, state-of-the-art packaging and innovative bonding technologies.
STripFET VI DeepGATE automotive-grade power MOSFETs
30 V and 40 V MOSFETs housed in DPAK and D2PAK, AEC-Q101
60/80 V STripFET VI DeepGATE MOSFETs
Enhanced on-state performance for DC-DC applications
550/650 V MDmesh V power MOSFETs
Featuring the industry’s lowest on-resistance per die area
1500 V PowerMESH MOSFETs
100% avalanche tested for rugged designs
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