This device is a P-channel SuperMESH™that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage Power MOSFETs.
DATASHEET
- Gate charge minimized
- Extremely high dv/dt capability
- 100% avalanche tested
- Very low intrinsic capacitance
- Improved ESD capability