Rad-Hard N-Channel 100V - 6A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFETprocess. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad TID
  • SEE radiation hardened



Description バージョン サイズ
DS7120 DS7120: Rad-Hard 100 V, 6 A N-channel Power MOSFET 8.0 769 KB
Technical Notes & Articles
Description バージョン サイズ
TN1188 TN1188: Chip storage and handling for aerospace products with silver backside 2.0 331 KB
TN1181 TN1181: Engineering Model quality level 2.0 371 KB

HW Model, CAD Libraries & SVD

HW Model, CAD Libraries & SVD
Description バージョン サイズ
STRH8N10 beginning of life PSpice model (.lib) 3.1 1 KB

Publications and Collaterals

Description バージョン サイズ
Aerospace and Hi-rel - ESCC, JANS & QML products 1.0 2 MB
サポート & コミュニティ

サンプル & 購入

製品型番 Marketing Status SMD PIN/Detailed Spec Quality Level EPPL Hi-Rel Package Lead Finish Packing Type Package: Product Marking Mass (gr) ECCN (EU) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STRH8N10S1 Active - Engineering Model - SMD.5 Gold Carrier Tape - - NEC EAR99 FRANCE MORE INFO
STRH8N10SG Active 5205/023/01 ESCC Flight - SMD.5 Gold Carrier Tape - - NEC EAR99 FRANCE MORE INFO

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

品質 & 信頼性

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STRH8N10S1 アクティブSMD.5 parallel seam welding EMIndustrialN/A
STRH8N10SG アクティブSMD.5 parallel seam welding FPIndustrialN/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.