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IGBTs

ST 的绝缘栅双极型晶体管(IGBT) 击穿电压为 350 V 至 1300 V,切换性能与低通态特性之间达到最佳匹配,可全面提高系统设计能效。 ST 还推出新型简单、高性能交流电机驱动器件 IGBT 智能模块系列,最大功率 2 kW。

1200 V trench-gate field-stop IGBT M series

Optimized for hard-switching applications up to 20 kHz, the M series of 1200 V IGBTs combines the industry’s best trade-off between conduction and switching-off energy with outstanding robustness and EMI behavior for more efficient and reliable industrial motor drives, solar inverters, UPS and welding equipment. Based on the third generation of trench-gate field-stop technology, the devices also benefit from improved efficiency at turn-on thanks to a latest-generation co-packaged fast recovery anti-parallel diode which also features enhanced softness.
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