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RF DMOS Transistors

ST offers a broad portfolio of RF DMOS transistors operating from a supply voltage ranging from 28 up to 250 V. They target applications in the 1 MHz to 250 MHz frequency range and feature high peak power (up to 1.2 kW) and high ruggedness capability (infinite:1 VSWR).

Target applications include:

  • RF plasma generators
  • Laser drivers
  • RF heating
  • Magnetic resonance imaging (MRI)
  • HF transceivers
  • FM broadcast

50 V DMOS RF MOSFET,采用STAC®气腔封装

与采用陶瓷封装的器件相比,采用意法半导体创新型STAC气腔封装的全新50 V DMOS器件将热阻降低了25%,提高了MTTF,提升了RF性能(高达350 W)和稳定性要求(65:1全相VSWR)。它们属于经济型解决方案,适于面向PECVD的RF发生器、等离子溅射和平板与太阳能电池制造设备等应用。
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