ST’s MOSFETs with a breakdown voltage range from 12 V to 40 V offer ultra-low gate charge and low on-resistance down to 1.3 mΩ (30 V) in the PowerFLAT 5x6 package. They are optimized to meet a broad range of requirements for point-of-load (POL), VRM, motherboards, notebooks, portable and ultra-portable appliances, linear regulators, synchronous rectification and automotive applications.
MOSFET features for this voltage rating include:
- Very low RDS(on)
- Wide package range including SMD PowerFLAT packages for compact designs and H2PAK packages for high power designs
- Standard, logic and super logic level threshold
- SAFeFET (Simple Added Features FET) MOSFETs with one of the following added features: temperature sensing, current sensing, ESD protection or drain source breakdown clamping
These MOSFETs are available in miniature and high-power packages: DPAK, D2PAK, H2PAK, IPAK, I2PAK, PowerSO10, SO-8, SOT-223, TO-220, and PowerFLAT (2x2; 3.3x3.3; 5x6; 5x6 double island, 5x6 asymmetrical double island, 5x6 common drain).
AEC-Q101 qualified 30 and 40 V STripFET VI DeepGATE MOSFETs
ST’s MOSFETs based on STripFET VI DeepGATE technology achieve extremely low conduction losses relative to their active chip size. These 30 V (H6 suffix) and 40 V (F6 suffix) MOSFETs minimize the energy normally lost in electrical drives and controls, leading to greater efficiency, while simultaneously reducing heat generation, allowing smaller, more lightweight assemblies. They feature low on-resistance ranging from 3.0 mΩ to 12.5 mΩ in industry-standard DPAK or D2PAK surface-mount power packages, taking up less board space. This new range of power MOSFETs also includes both logic- and standard-level types.