ST’s portfolio of P-channel MOSFETs has been recently enlarged with the addition of trench-gate devices. These new P-channel STripFET MOSFETs feature extremely low on-resistance. Available in very small form factor packages, they are specifically designed for portable applications. MOSFET features for this voltage rating include:
- Very low RDS(on) for increased application efficiency
- Standard, logic and ultra level threshold for increased design flexibility
P-channel MOSFET portfolio extended with new trench-gate devices
ST has extended its offering of trench-gate p-channel MOSFETs (from -100 V up to -20 V) in order to help simply designs and meet power efficiency targets by using fewer devices in smaller package sizes. The latest devices feature a very low on-state resistance (less than 22.5 mΩ for a -20 V device in the micro-package PowerFLAT 2x2) and figure of merit (FoM).