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RF PLL Synthesizers

Combining high performance, high integration, wideband and multi-band capabilities, ST's RF synthesizers represent a robust and effective alternative to discrete, expensive and bulky PLL and VCO solutions. Reducing RF BOM and footprint by up to 60% while increasing reliability, these synthesizers are a perfect fit for high-performance applications such as GSM/3G/LTE base stations, microwave links, cable modems, satellite, broadcasting, instrumentation, security, defense and test equipment.

STuW81300 microwave wide-band RF synthesizer

The STuW81300 microwave wide-band RF synthesizer is able to cover frequencies from 1.925 to 16 GHz on a single IC device. Implemented in ST’s integrated BiCMOS SiGe technology to provide leading-edge performance, the STuW81300 enables versatile RF architectures at greater economy (BOM reduction) than traditional microwave solutions based on III-V technologies. The STuW81300 comprises a fractional-N phase-locked-loop (PLL) core with low-noise wideband voltage-controlled oscillators (VCOs) and voltage regulators. Furthermore, the STuW81300 features a broad range of programmable hardware options to accommodate the needs of most current and future RF/microwave applications, including radio links, satellite communications, base stations, and test and measurement equipment.

Key benefits:

  • Wide frequency range: from 1.925 to 16 GHz with a single device
  • Flexible high level of integration (cost savings on BOM)
    • Low-noise, high-PSRR LDO voltage regulators 
    • Single supply voltage from 3.0 to 5.4 V
    • Internally-matched broadband RF outputs with +6 dBm @ 6 GHz and +4 dBm @ 12 GHz power
  • High performance
    • VCO phase noise (6 GHz) : -131 dBc/Hz @ 1 MHz offset
    • Noise floor (6 GHz): -158 dBc/Hz on 6 GHz carrier
    • Typical RMS jitter of 0.13 ps

STW81200 wide-band RF synthesizer

The STW81200 wide-band RF synthesizer covers frequencies from 46.875 MHz to 6 GHz. With low noise VCOs and an integer and fractional-N PLL architecture for supporting multi-standard SDR applications, the STW81200 also integrates low-noise LDOs, internally-matched broadband RF outputs and supports an external crystal oscillator to further reduce the number of external components. The STW81200’s flexible power supply options ensure the best tradeoff between performance and consumption.

Key benefits:

  • High level of integration (cost savings on BOM)
    • Low-noise, high-PSRR LDO voltage regulators
    • Internally-matched broadband RF outputs
  • High performance:
    • Normalized in-band phase noise floor:-227 dBc/Hz
    • VCO phase noise: -135 dBc/Hz @ 1 MHz offset, 4.0 GHz carrier
    • Noise floor: -160 dBc/Hz
  • Single supply voltage from 3.0 to 5.4 V
  • High degree of flexibility and wide-band coverage from 46.875 MHz to 6 GHz with a single device for a wide range of applications