ST’s 28/32 V LDMOS transistors targeting operation up to 1 GHz are ideal for applications such as repeaters, base stations and government wideband communications. They are available in both ceramic packages and the cost-effective Power SO-10RF plastic package.

Key features

• Frequency: from HF to 1 GHz
• Breakdown voltage BVDSS: >65 V
• Supply voltage: up to 32 V
• Output power: from 2 W up to 120 W
• Gain: >14 dB
• Efficiency: >50%
• Available in die form