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IGBTs

ブレークダウン電圧が350V~1,300Vの範囲にわたるST’のIGBTは、スイッチング性能と低いオンステート特性のバランスをうまく取って、さらに広い範囲でエネルギー効率に優れたシステムを設計できるようにします。 STはまた、2KWまでのシンプルかつ高性能なACモータ・ドライブ向けに、新しいIGBTインテリジェント・パワー・モジュール・ファミリも提供しています。

1200 V trench-gate field-stop IGBT M series

Optimized for hard-switching applications up to 20 kHz, the M series of 1200 V IGBTs combines the industry’s best trade-off between conduction and switching-off energy with outstanding robustness and EMI behavior for more efficient and reliable industrial motor drives, solar inverters, UPS and welding equipment. Based on the third generation of trench-gate field-stop technology, the devices also benefit from improved efficiency at turn-on thanks to a latest-generation co-packaged fast recovery anti-parallel diode which also features enhanced softness.
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