ST Life.augmented


STのシリコン・カーバイド(SiC)ダイオードは、Siより優れたSiCの物理特性を利用しています。動的特性は4倍優れ、順方向電圧VFは15 %低くなっています。


STのSiC製品ポートフォリオは、ハロゲン・フリーのTO-247パッケージに収容された20 A / 600 Vのダイオードを含んでおり、4~12 AまでのスルーホールおよびSMDパッケージ製品に拡張しています。

今では、STの6 A / 1200 Vのデバイスと650 VシリーズのSiCダイオードは第2世代に入りつつあります。

Performance comparison curve between 600 V Si, Ultrafast tandem and Si diodes

SiC diodes – now in TO-220AB/AC Insulated packages

Seven SiC diodes are now available in the TO-220AB Ins and TO-220AC Ins insulated packages with internal insulation between the silicon and the metal tab of the package. These packages provide a thermal resistance junction to heatsink (Rth(j-hs)) equivalent to or better than using external insulating foils while eliminating the fiddly, time consuming and error prone process of mounting the external insulation foil with heatsink compound between the package and the heatsink. They provide approximately 50% lower Rth(j-hs) compared to the TO-220FP package and one customer estimated that they saved approximately 20 seconds per diode in assembly time in the manufacture of their SMPS which yielded a 1% increase in units per hour on their manufacturing line.

Four 650V single diodes from 4 A to 10 A (STPSCxxH065DI) are available in the TO-220AC Ins package and three 650V dual in-series diodes from 6 A to 10 A (STPSCxxTH13TI) are available in the TO-220AB Ins package.

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