Advanced galvanic isolated gate drivers for SIC MOSFETs and IGBTs
When designing high-efficiency power stages, gate-driver robustness and protection matter as much as switching performance. The STGAP3S series helps drive SiC MOSFETs and IGBTs up to 1200 V with strong isolation, fast protection response, and the flexibility to match your power stage architecture. Built for demanding industrial and energy applications, selected devices also offer high CMTI, desaturation protection, Miller clamp, and soft turn-off features.
STGAP3S series: Outstanding robustness with high current and advanced protection
3 A galvanically isolated SiC gate driver with tunable soft turn-off
3 A galvanically isolated SiC gate driver with tunable soft turn-off
The STGAP3S3S series helps you drive SiC MOSFETs up to 1200 V. It combines a 3 A internal Miller clamp, dedicated 9 V desaturation protection, and VDD/VH UVLO with reinforced galvanic isolation against transients up to 9.6 kV and CMTI up to 200 V/ns, soft turn-off, all in a compact package. These drivers are built for high-efficiency power conversion in demanding industrial and energy applications.
3 A galvanically isolated IGBT gate driver with DESAT protection
3 A galvanically isolated IGBT gate driver with DESAT protection
Optimized for IGBTs and Si MOSFETs up to 1200 V, the STGAP3S3IF helps improve protection and reliability in demanding power conversion designs. It combines a 3 A internal Miller clamp, dedicated 9 V desaturation protection, with reinforced galvanic isolation against transients up to 9.6 kV and CMTI up to 200 V/ns, all in a compact package for motor drives, inverters, and industrial power conversion.
STGAP3S series key features
- BCD9S galvanic isolation technology
- High voltage: up to 1200 V
- Driver current: 3 A, 6 A & 10 A
- Drive SiC MOSFETs and IGBTs
- Desaturation protection
- Compact SO16W package
- Adjustable soft turn-off function
- Fast response: 75 ns delay
- Miller CLAMP function
- Optional negative driving
- ±200V/ns CMTI
Application examples
Air conditioning
Energy storage system
Factory automation
Charging stations
Optimize your design for the right switching technology
SiC switches fit designs that need high switching frequencies, maximum efficiency, higher operating temperatures, and greater power density in compact form factors.
IGBTs remain a strong choice for cost-sensitive designs, switching frequencies below 20 kHz, high-current or moderate-voltage modules, and applications that benefit from mature supply chains or long-term qualifications. They also tolerate short circuits for longer, which can simplify protection design.
| Target switch | SOFTOFF | IGATE | Miller clamp | Package |
|---|---|---|---|---|---|
| IGBT | Yes, tunable | 10 A | Driver for external N-Ch | SO16W | |
| IGBT | Yes, tunable | 6 A | Driver for external N-Ch | SO16W | |
| IGBT | NO | 3 A | 3 A | SO16W | |
| SiC | Yes, tunable | 10 A | Driver for external N-Ch | SO16W | |
| SiC | Yes, tunable | 6 A | Driver for external N-Ch | SO16W | |
| SiC | Yes, tunable | 3 A | 3 A | SO16W |
Optimize your design for the right switching technology
| Target switch | SOFTOFF | IGATE | Miller clamp | Package |
|---|---|---|---|---|---|
| IGBT | Yes, tunable | 10 A | Driver for external N-Ch | SO16W | |
| IGBT | Yes, tunable | 6 A | Driver for external N-Ch | SO16W | |
| IGBT | NO | 3 A | 3 A | SO16W | |
| SiC | Yes, tunable | 10 A | Driver for external N-Ch | SO16W | |
| SiC | Yes, tunable | 6 A | Driver for external N-Ch | SO16W | |
| SiC | Yes, tunable | 3 A | 3 A | SO16W |
SiC switches fit designs that need high switching frequencies, maximum efficiency, higher operating temperatures, and greater power density in compact form factors.
IGBTs remain a strong choice for cost-sensitive designs, switching frequencies below 20 kHz, high-current or moderate-voltage modules, and applications that benefit from mature supply chains or long-term qualifications. They also tolerate short circuits for longer, which can simplify protection design.
Evaluation ecosystem
EVLSTGAP3S3S
Half-bridge evaluation board for STGAP3S3S SiC MOSFETs isolated gate driver with protection features.
EVLSTGAP3S3IF
Half-bridge evaluation board for STGAP3S3IF IGBT galvanically isolated gate driver with protection features.
Evaluation boards for STGAP3S with IGBTs and SiC up to 1200 V
| Devices | STGAP3S variant | Data briefs | eStore |
|---|---|---|---|---|
| STGAP3SXS | 10A, SiC, SOFTOFF | |||
| STGAP3SXI | 10A, IGBT, SOFTOFF | |||
| STGAP3S6S | 6A, SiC, SOFTOFF | |||
| STGAP3S6I | 6A, IGBT, SOFTOFF | |||
| STGAP3S3S | 3A, SiC, SOFTOFF | |||
| STGAP3S3IF | 3A, IGBT |